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Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

1993; Institute of Physics; Volume: 32; Issue: 9R Linguagem: Inglês

10.1143/jjap.32.3675

1347-4065

Shinsuke Sadamitsu, Shigeru Umeno, Yasuo Koike, Masataka Hourai, Shigeo Sumita, Tatsuhiko Shigematsu,

Solidification and crystal growth phenomena

As-grown defects in 6-inch-diameter Czochralski-silicon crystals grown under different crystal growth rate conditions (0.4, 0.7, 1.1 mm/min) were studied by means of preferential etching and IR light-scattering tomography (LST). Grown-in defect images were classified into four types as follows: (a) flow patterns (wedge-shaped etch pits), (b) IR-defect images observed by LST, (c) ringlike distributed small pits, and (d) large pits. It was found by secondary ion mass spectrometry that IR defects are oxygen precipitates. Large pit defects were identified by transmission electron microscopy as large dislocation loops with a length of about 30 µm. At growth rates from 0.7 mm/min to 1.1 mm/min, flow pattern defects and IR defects coexist inside a ringlike distributed oxidation-induced stacking fault (ring-OSF) region. However, at growth rates less than 0.7 mm/min, large pit defects were observed in the region outside the ring. Characteristic ringlike distributed small pit defects were observed on the outer periphery of the ring region. Flow pattern defects were annihilated during annealing at 1100°C, while IR defects were stable at 1250°C.