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Mechanism of silicon surface roughening by reactive ion etching

1986; Wiley; Volume: 8; Issue: 6 Linguagem: Inglês

10.1002/sia.740080604

1096-9918

G. S. Oehrlein, R. Schad, M. Jaso,

Semiconductor materials and devices

Abstract Rough silicon surfaces resulting from CF 4 reactive ion etching have been studied by scanning electron microscopy/scanning Auger microscopy and x‐ray photoemission spectroscopy. The experimental data demonstrate a roughening mechanism based on laterally non‐uniform etch rates due to the existence of involatile surface residues.