Portal de Periódicos da CAPES

Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers at temperatures from 200 K to 6 K

1996; Institute of Electrical and Electronics Engineers; Volume: 8; Issue: 3 Linguagem: Inglês

10.1109/68.481102

1941-0174

Gary Goncher, Bo Lü, Wenlin Luo, Julian Cheng, S. D. Hersee, Siyi Sun, Richard Schneider, J.C. Zolper,

Semiconductor Quantum Structures and Devices

We demonstrate for the first time the CW performance of AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) at cryogenic temperatures from 6 K to 200 K. By detuning the cavity mode with respect to the gain peak so that optimum dc lasing operation is achieved at -100 K, we find that this optimum lasing performance can be maintained down to temperatures as low as 6 K. Across a broad range of temperatures from 200 K to 6 K, the minimum threshold current of a 16-μm diameter VCSEL stayed below 4 mA, while its -3-dB modulation bandwidth increased by about 70% to 11 GHz at 6 K, and the external slope efficiency is greater than 70%.