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STM-Induced Hydrogen Desorption via a Hole Resonance

1998; American Physical Society; Volume: 80; Issue: 12 Linguagem: Inglês

10.1103/physrevlett.80.2618

1092-0145

Kurt Stokbro, Carsten Thirstrup, Makoto Sakurai, Ulrich J. Quaade, Ben Yu-Kuang Hu, Francesc Pérez‐Murano, F. Grey,

Semiconductor materials and devices

We report STM-induced desorption of H from $\mathrm{Si}\left(100\right)\ensuremath{-}\mathrm{H}\left(2\ifmmode\times\else\texttimes\fi{}1\right)$ at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at $\ensuremath{-}7\mathrm{V}$. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H $5\ensuremath{\sigma}$ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at $\ensuremath{-}7\mathrm{V}$ is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.