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The electronic band structure of (GaAs) n (AlAs) n superlattices

1986; IOP Publishing; Volume: 1; Issue: 3 Linguagem: Inglês

10.1088/0268-1242/1/3/001

1361-6641

A. C. Ferraz, G. P. Srivastava,

Semiconductor materials and interfaces

The authors report on the electronic band structure of (GaAs)n(AlAs)n superlattices. Using the self-consistent pseudopotential method they conclude that the band diagram of ultrathin as well as multilayer superlattices is similar to that presented in recent experiments. However, some differences are pointed out with regard to the variation of the valence band discontinuity at the GaAs/AlxGa1-xAs heterojunction as a function of x.