Atomic scale simulation of defect production in irradiated 3C-SiC
2001; American Institute of Physics; Volume: 90; Issue: 5 Linguagem: Inglês
10.1063/1.1389523
ISSN1520-8850
AutoresRam Devanathan, William J. Weber, Fei Gao,
Tópico(s)Semiconductor materials and devices
ResumoMolecular dynamics simulations using a modified Tersoff potential have been used to study the primary damage state and statistics of defect production in displacement cascades in 3C-SiC. Recoils with energies from 0.25 to 50 keV have been simulated at 300 K. The results indicate that: (1) the displacement threshold energy surface is highly anisotropic; (2) the dominant surviving defects are C interstitials and vacancies; (3) the defect production efficiency decreases with increasing recoil energy; (4) defect clusters are much smaller and more sparse compared to those reported in metals; and (5) a small fraction of the surviving defects are antisite defects.
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