Optical band-gap shrinkage in highly transparent and conducting ZnO thin films deposited by the Pyrosol process
1994; American Institute of Physics; Volume: 76; Issue: 3 Linguagem: Inglês
10.1063/1.357665
ISSN1520-8850
AutoresA. Tiburcio-Silver, J.C. Joubert, M. Labeau,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoAn optical band-gap shrinkage was found in highly transparent and conducting thin films deposited by the Pyrosol process. The narrowing appears at carrier concentrations which are consistent with a metal-semiconductor transition. The gap-shrinkage dependence on carrier concentration is consistent with the model proposed by P. E. Schmid [Phys. Rev. B 23, 5531 (1981)] for Si:As and Si:B.
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