The Silicon Vacancy in SiC
2009; Trans Tech Publications; Volume: 615-617; Linguagem: Inglês
10.4028/www.scientific.net/msf.615-617.347
ISSN1662-9760
AutoresErik Janzén, Ádám Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Nguyên Tiên Són,
Tópico(s)Thin-Film Transistor Technologies
ResumoA model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.
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