A corrugated capacitor cell (CCC)
1984; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 6 Linguagem: Inglês
10.1109/t-ed.1984.21602
ISSN1557-9646
AutoresH. Sunami, T. Kure, N. Hashimoto, K. Itoh, T. Toyabe, S. Asai,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoA new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance C S of its cell size. A typical C S value of 60 fF has been obtained with 3 × 7 µm 2 CCC having a 4-µm deep moat and a capacitor insulator equivalent to 15 nm SiO 2 in thickness. The CCC is discussed in terms of its capacitance characteristics, dRAM operation with unit 32-Kbit array, some limiting factor to its closer packing, and future considerations.
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