Efficient silicon light emitting diodes made by dislocation engineering
2003; Elsevier BV; Volume: 16; Issue: 3-4 Linguagem: Inglês
10.1016/s1386-9477(02)00690-2
ISSN1873-1759
AutoresM. A. Lourenço, M. S. A. Siddiqui, R. Gwilliam, Guosheng Shao, K.P. Homewood,
Tópico(s)Semiconductor materials and devices
ResumoEfficient silicon-based light emitting diodes have been fabricated using the dislocation engineering method. Crucially this technique uses entirely conventional ULSI processes. The devices were fabricated by conventional low-energy boron implantation into silicon substrates followed by high-temperature annealing, and strong silicon band edge luminescence was observed. Dislocation engineering is also shown to reduce the thermal quenching for other material systems. Dislocation engineered β-FeSi2 and Er light emitting devices were fabricated and room temperature electroluminescence at ∼1.5μm was observed in both cases.
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