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Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO 3 Thin Film Capacitor

2001; Institute of Physics; Volume: 40; Issue: 4R Linguagem: Inglês

10.1143/jjap.40.2367

1347-4065

Kazuhide Abe, Naoko Yanase, Takashi Kawakubo,

Semiconductor materials and devices

Polarization vs voltage ( P – V ) hysteresis loops were investigated for a heteroepitaxial BaTiO 3 thin film capacitor. Depending on amplitude of DC bias voltage which was superposed on alternative triangular waves, two types of P – V hysteresis loops were observed. They were characterized by the magnitude of the voltage shift from 0 V and named “on” and “off” states after their position. The transition between the two states exhibited hysteresis when the DC bias voltage was gradually increased and decreased. When intermediate amplitude of the DC bias voltage was applied, a “mixed” state appeared in the hysteresis loop, in which polarization reversal took place in two steps. Owing to the “on” state stabilized in the hysteresis loop, ferroelectric polarization of the heteroepitaxial capacitor was confirmed to be retained for longer than 4 h at 0 V.