In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy
2001; American Institute of Physics; Volume: 78; Issue: 13 Linguagem: Inglês
10.1063/1.1356451
ISSN1520-8842
AutoresM. Furusawa, J. Tashiro, Atsushi Sasaki, Kiyotaka Nakajima, Masahiro Takakura, Toyohiro Chikyow, Parhat Ahmet, Mamoru Yoshimoto,
Tópico(s)Semiconductor materials and devices
ResumoThe room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV (∼10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1̄10]CeO2‖[11̄0]Si), was observed for the films thicker than about 1 nm.
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