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Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O 3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition

2004; Institute of Physics; Volume: 43; Issue: 9S Linguagem: Inglês

10.1143/jjap.43.6567

1347-4065

Shoji Okamoto, Shintaro Yokoyama, Yoshihisa Honda, Gouji Asano, Hiroshi Funakubo,

Electronic and Structural Properties of Oxides

(111) c - and (100) c -oriented SrRuO 3 films were successfully grown on (111)Pt/TiO 2 /SiO 2 /(100)Si and (100)LaNiO 3 /(111)Pt/TiO 2 /SiO 2 /(100)Si substrates, respectively, by RF-magnetron sputtering method. On these (111) c - and (100) c -oriented SuRuO 3 films, (111)- and (001)/(100)-oriented fiber-textured Pb(Zr 0.35 Ti 0.65 )O 3 films with 2.0 µm in thickness were grown by metalorganic chemical vapor deposition (MOCVD). Well-saturated polarization-electric field ( P - E ) hysteresis loops were observed for both films. The remanent polarization ( P r ) values of (111)- and (001)/(100)-oriented 2.0 µm-thick Pb(Zr,Ti)O 3 (PZT) films were almost the same at approximately 45 µC/cm 2 at 200 kV/cm, while the coercive field ( E c ) values of these films were slight different at 61 kV/cm and 71 kV/cm, respectively. Moreover, the field-induced strains measured by scanning probe microscopy were also almost the same at approximately 0.2% up to 100 kV/cm. These data show the crystal orientation independence of the remanent polarization and field-induced strain of Pb(Zr 0.35 Ti 0.65 )O 3 films.