Simulations of field emission from a semiconducting (10,0) carbon nanotube

2002; American Institute of Physics; Volume: 20; Issue: 1 Linguagem: Inglês

10.1116/1.1428275

ISSN

1520-8567

Autores

A. Mayer, N. M. Miskovsky, P. H. Cutler,

Tópico(s)

Mechanical and Optical Resonators

Resumo

We present three-dimensional simulations of field emission from an ideal open (10,0) carbon nanotube without adsorption, by using a transfer-matrix methodology. By introducing pseudopotentials for the representation of carbon atoms and by repeating periodically a basic unit of the nanotube, band-structure effects are manifested in the distribution of energies. The total-energy distributions of both the incident and field-emitted electrons present features, which are related to the gap of the semiconducting (10,0) nanotube, to a van Hove singularity, and to stationary waves in the structure. The transmission through the middle of the gap is exponentially decreasing, with each basic unit of the nanotube associated with a reduction of the current density at this particular energy value by a factor of 5.4. Except for the contribution associated with the van Hove singularity, all peaks are displaced to lower energies when the extraction field is increased.

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