‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation

2003; Elsevier BV; Volume: 102; Issue: 1-3 Linguagem: Inglês

10.1016/s0921-5107(02)00629-3

ISSN

1873-4944

Autores

A.E.M. De Veirman,

Tópico(s)

Electron and X-Ray Spectroscopy Techniques

Resumo

Abstract Cross-sectional transmission electron microscopy (TEM) analysis has become routinely used in semiconductor industry to support failure and yield analysis. Plan-view transmission electron microscopy analysis however is much less frequently performed. In this paper it is illustrated that plan-view transmission electron microscopy analysis can add valuable information in yield analysis studies, especially when crystal defects are involved. ‘3-Dimensional’ information can be obtained by combining cross-sectional transmission electron microscopy analysis with plan-view analysis. If the available material is limited, it can become a difficult choice whether to go for a cross-sectional or a plan-view analysis. Therefore it was explored if a cross-sectional specimen could still be made out of a plan-view specimen, using the plan-view analysis to locate the failure site precisely. This has recently been successfully done using the in-situ lift-out technique in the focused ion beam machine.

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