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Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy

2002; Institute of Physics; Volume: 41; Issue: Part 2, No. 4B Linguagem: Inglês

10.1143/jjap.41.l452

1347-4065

Yutaka Ohno, M. Akita, Shigeru Kishimoto, K. Maezawa, Takashi Mizutani,

Advancements in Semiconductor Devices and Circuit Design

Temperature distributions in AlGaN/GaN high-electron-mobility transistors under bias voltage have been measured by micro-Raman scattering spectroscopy. The temperature was estimated from the Raman shift of E2 phonons of GaN. The spatial and temperature resolutions are 1 µm and 10 K, respectively. When the power dissipation was 248 mW at a drain voltage of 40 V, the peak temperature of 443 K was observed at the gate edge on the drain side at the center of the channel. This position corresponds to the high-field region at the gate edge.