Artigo Acesso aberto Revisado por pares

Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups

2011; Springer Nature; Volume: 43; Issue: 4 Linguagem: Inglês

10.1038/pj.2010.146

ISSN

1349-0540

Autores

Nobumitsu Niina, Hiroto Kudo, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa, Hiroaki Oizumi, Toshiro Itani, Tadatomi Nishikubo,

Tópico(s)

Electrowetting and Microfluidic Technologies

Resumo

The characteristics of Noria analogs with 12 ethoxy groups and 12 hydroxy groups (Noria-OEt), which were synthesized by the condensation reaction of 3-ethoxyphenol with 1,5-pentanedial, were examined in detail. The solubility of the synthesized Noria-OEt in common organic solvents was better than that of Noria. In addition, Noria-OEt was soluble in 2.38 wt% tetrametyl ammonium hydroxide (TMAH) aqueous as a developer. The thermal stability and mechanical properties were similar to those of Noria because of the ladder structure and amorphous characteristics, which means that the film-forming properties were confirmed. These characteristics are advantageous for use as a molecular glass photoresist. The patterning properties of the negative-type, alkaline developable, multicomponent photoresist based on Noria-OEt, with polyfunctional benzyl alcohols as a crosslinker and a photoacid generator, were evaluated with an extreme ultraviolet lithography system. This negative-type photoresist with 2,4-dihydroxymethyl-6-methylphenol as a crosslinker gave a resolution pattern of 35 nm half-pitch with 10.0 mJ cm−2. We synthesized Noria analogs (Noria-OEt) with 12 ethoxy groups and 12 hydroxy groups by the condensation reaction of 3-ethoxyphenol with 1,5-pentanedial in high yield and prepared negative-type photoresist composed of Noria-OEt, crosslinker, photoacid generator and quencher. The negative-working photoresist gave a resolution pattern of 35-nm half-pitch with high sensitivity (10.0 mJ cm−2) by an extreme ultraviolet (EUV) lithography system.

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