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High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

2009; Institute of Physics; Volume: 156; Issue: 3 Linguagem: Inglês

10.1149/1.3060129

1945-7111

Sun Il Kim, Jin‐Seong Park, Chang Jung Kim, Jae Chul Park, Ihun Song, Young Soo Park,

Electrical and Thermal Properties of Materials

High reliable bottom gate amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors (TFTs) have been fabricated by using the double active layers. Top and bottom layers were CuGaInZnO (CGIZO) and GIZO, respectively. When the plasma-enhanced processes were introduced during fabrication of the TFTs, the TFT with a-GIZO single active layer did not exhibit electrically reliable performance due to forming the conducting surface layer from the plasma damages. The double-active-layer TFT with a CGIZO layer had the reliable performance ( of , of , subthreshold gate swing value of /decade, of ) even under the same processes. This suggested that the Cu atom of CGIZO layer suppressed the carrier concentration during plasma-enhanced processes. The TFTs with double active layer showed excellent stability, which has the threshold voltage shift of at drain current under for .