A 500 MHz carbon nanotube transistor oscillator
2008; American Institute of Physics; Volume: 93; Issue: 12 Linguagem: Inglês
10.1063/1.2988824
ISSN1520-8842
AutoresAaron A. Pesetski, James E. Baumgardner, S. V. Krishnaswamy, H. Zhang, J.D. Adam, Coşkun Kocabaş, Tony Banks, John A. Rogers,
Tópico(s)Analog and Mixed-Signal Circuit Design
ResumoOperation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.
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