Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x-ray photoelectron spectroscopy
1995; American Institute of Physics; Volume: 67; Issue: 19 Linguagem: Inglês
10.1063/1.114595
ISSN1520-8842
AutoresAkira Izumi, Yuichiro Hirai, Kazuo Tsutsui, N. S. Sokolov,
Tópico(s)Semiconductor materials and devices
ResumoThe valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x-ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si.
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