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Critical Thickness of AlN Thin Film Grown on Al 2 O 3 (0001)

2001; Institute of Physics; Volume: 40; Issue: 7R Linguagem: Inglês

10.1143/jjap.40.4677

1347-4065

Jin Woo Kim, Yoon‐Hwae Hwang, Jin Hyung Cho, Hyung-Kook Kim,

Metal and Thin Film Mechanics

High-quality thin aluminum nitride films of different thicknesses between 17 Å and 1000 Å, were grown on sapphire (0001) by DC-faced target sputtering at 500°C. A change in lattice constants of films due to a lattice mismatch between films and substrates was observed. The growth mechanism of epitaxial AlN film in the early stage was found to be consistent with the extended atomic distance mismatch (EADM) model. From the fitting result of the lattice constant as a function of thickness based on the equilibrium theory, the critical thickness at which dislocations are introduced into AlN films grown on Al 2 O 3 (0001) was estimated as ∼ 4.5 Å.