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BIBTEX RIS

Effects on channeling of radiation damage due to 28 GeV protons

1994; Elsevier BV; Volume: 90; Issue: 1-4 Linguagem: Inglês

10.1016/0168-583x(94)95525-5

ISSN

1872-9584

Autores

S. Baker, Richard A. Carrigan, V.R. Cupps, J.S. Forster, W. M. Gibson, C. Sun,

Tópico(s)

Radiation Detection and Scintillator Technologies

Resumo

For an irradiation of 2.9 × 1019 protons at a beam energy of 28 GeV, the channeling minimum yield in a silicon single crystal increased from 2.3% to 4.1%. The radiation damage occurred with a proton fluence of (4.1 ± 1.4) × 1020cm2. The degradation was measured with MeV-range He ions using Rutherford backscattering. The relevance to bent crystal extraction of TeV beams is discussed.

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