Doping dependence of the Fermi surface in ( B i , P b ) 2 Sr </…
2002; American Physical Society; Volume: 66; Issue: 1 Linguagem: Inglês
10.1103/physrevb.66.014502
ISSN1095-3795
AutoresA. A. Kordyuk, С. В. Борисенко, M. S. Golden, S. Legner, K. Nenkov, M. Knupfer, J. Fink, H. Berger, L. Forró, R. Follath,
Tópico(s)Magnetic properties of thin films
ResumoA detailed and systematic angle-resolved photoemission spectroscopy investigation of the doping dependence of the normal-state Fermi surface (FS) of modulation-free (Pb,Bi)-2212 is presented. The FS does not change in topology away from hole like at any stage. The FS area does not follow the usual curve describing ${T}_{c}$ vs x for the hole-doped cuprates, but is downshifted in doping by ca. 0.05 holes per Cu site, indicating the consequences of a significant bilayer splitting of the FS across the whole doping range. The strong k dependence of the FS width is shown to be doping independent. The relative strength of the shadow FS has a doping dependence mirroring that of ${T}_{c}.$
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