Rectifying behaviour of the polymer/semiconductor heterojunction: pbT(p-type) /TiO2(n-type)
1992; Elsevier BV; Volume: 273; Issue: 1-2 Linguagem: Inglês
10.1016/0039-6028(92)90261-4
ISSN1879-2758
AutoresLuisa Torsi, Cosimino Malitesta, Francesco Palmisano, Luigia Sabbatini, P. G. Zambonin, Gaetano Scamarcio, M. Lugarà,
Tópico(s)Transition Metal Oxide Nanomaterials
ResumoA polybithiophene p-type/titanium dioxide n-type (p-pbTn-TiO2) heterojunction has been prepared by electrochemically depositing in sequence both materials. Electrical investigation reveals the diode-like behaviour with a rectifying ratio at 3 V as high as 3 × 103. The analysis in the framework of the standard semiclassical theory for a p-n junction allows to determine the band alignment. The lower radiative efficiency of p-pbTn-TiO2 with respect to p-pbT/Pt is related to the separation of photogenerated carriers induced by the junction, giving an indirect experimental evidence of a photovoltaic effect.
Referência(s)