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Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs / AlGaAs Quantum Well Laser Diodes

1991; Institute of Physics; Volume: 30; Issue: 3A Linguagem: Inglês

10.1143/jjap.30.l371

1347-4065

Kazuo Fukagai, Shin Ishikawa, Kenji Endo Yuasa,

Silicon and Solar Cell Technologies

Dark-line defects (DLDs) of threading dislocation origin in strained InGaAs/AlGaAs quantum well laser diodes were observed by the electron-beam induced current technique. Current density dependence for the DLD growth velocity was compared quantitatively with that for unstrained GaAs/AlGaAs quantum well laser diodes for the first time. The <110>DLD growth velocity in InGaAs QW laser diodes is estimated to be about 1/100 of that for the <100>DLD growth in the GaAs QW laser diodes, showing linear dependence on injected current densities.