Characterization of interface states at III-V compound semiconductor-metal interfaces
1991; American Institute of Physics; Volume: 69; Issue: 4 Linguagem: Inglês
10.1063/1.348712
ISSN1520-8850
AutoresL. Burstein, J. Bregman, Yoram Shapira,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoSurface photovoltage spectroscopy (SPS) has been used for direct measurements of the extrinsic surface states within the band gaps of p-InP (110) and (100) and n-GaAs(110) before and after Al and Au deposition. The observed metal-induced surface states are found to pin the Fermi level at monolayer coverages at Ev+0.83 eV for Au/p-InP(110), Ev+1.10 eV for Al/p-InP(110), Ec−0.94 eV for Au/n-GaAs(110), and Ec−0.80 eV for Al/n-GaAs(110). The Au/Al/p-InP(110) structure, studied for the first time using SPS provides evidence of strong Al clustering upon the InP surface. Chemically etched and UHV-cleaved p-InP surfaces and Au interfaces are also compared. The correlation between the observed energy state positions and electrically measured Schottky barrier heights is discussed.
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