Reducing VBE wafer spread of bipolar transistor via a compensation circuit
1992; Institution of Engineering and Technology; Volume: 28; Issue: 15 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresR. Amador, Alicia Polanco, Hugo Hernández, Ernesto Pérez, Agnes Nagy,
Tópico(s)Analog and Mixed-Signal Circuit Design
ResumoA circuit which reduces the VBE wafer spread of a standard bipolar transistor in linear ICs is described. This compensation circuit takes advantage of the close correlation between Is and βr. The spread of VBE is the major source of output error in IC temperature sensors with intrinsic reference, which thereby require resistive trimming.
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