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'Charging' effects in the scanning electron microscope

1971; IOP Publishing; Volume: 4; Issue: 9 Linguagem: Inglês

10.1088/0022-3735/4/9/002

2051-5685

T J Shaffner, R. D. Van Veld,

Integrated Circuits and Semiconductor Failure Analysis

A mechanism for the 'charging' artifacts which obscure detail on SEM images of high resistivity specimens is described. An interaction equation, relating the properties of specimen and environment, predicts negative charge build-up and large potential fields. Charging effects are traced to the specular deflection of beam electrons in these fields, and experiments with uncoated polymer fibres are described.