Laser‐assisted photochemical etching of Hg0.8Cd0.2Te
1989; American Institute of Physics; Volume: 54; Issue: 1 Linguagem: Inglês
10.1063/1.100833
ISSN1520-8842
Autores Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoA laser-assisted photochemically driven etching process has been developed for Hg0.8Cd0.2Te (12 μm material). It is an etch which does not melt the surface of the material or induce mercury migration. Small geometry features (vias less than 10 μm in diameter) with straight-edged sidewalls have been produced. The etching mechanism is a photoenhanced rapid oxidation with subsequent solvation of the oxides.
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