Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process
2006; American Institute of Physics; Volume: 89; Issue: 23 Linguagem: Inglês
10.1063/1.2404608
ISSN1520-8842
AutoresTomohiro Kubota, Takeshi Hashimoto, Yasushi Ishikawa, Seiji Samukawa, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki, Masaki Takeguchi, Kensuke Nishioka, Ichiro Yamashita,
Tópico(s)Semiconductor materials and devices
ResumoA defect-free nanometer-scale silicon disk (nanodisk) on thin SiO2 film was precisely fabricated by using Cl neutral beam etching of a 3.5–4-nm-thick polycrystalline silicon on 1.4–3-nm-thick underlying SiO2 with a 7-nm-diameter ferritin iron core mask. Kelvin force microscope observations revealed that nanodisks could maintain injected positive and negative charges. Additionally, Coulomb staircases were observed by I-V measurement of a nanodisk at a temperature of 25K. These results indicate that the nanodisk fabricated in this research had a precise quantum effect structure and attained the single electron property. This process has great potential in the development of future quantum effect devices.
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