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Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O 2 + and Ar + Ion Sputtering

1995; Institute of Physics; Volume: 34; Issue: 8A Linguagem: Inglês

10.1143/jjap.34.l1010

1347-4065

Hyung-Ik Lee, Riichiro Mitsuhashi, Masahiko Inoue, Ryuichi Shimizu, S. Hofmann,

Semiconductor materials and devices

Employment of a LaB 6 cathode with Re filament for an electron-bombardment ion gun has enabled O 2 + ions as well as Ar + ions to be provided for surface analysis in ultrahigh vacuum. This technique was applied to depth profiling of a GaAs/AlAs superlattice by monitoring the Auger peak-to-background ratio of the following high-energy peaks; Ga-LMM (1066 eV), As-LMM (1222 eV), Al-KLL (1390 eV) and O-KVV (508 eV). The energy shift of O-KVV Auger peak was also monitored. Results show the deficiency of As atoms and the formation of Al oxides at the surface of O + 2 -sputtered AlAs layers.