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Improved thermal stability of In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors with Al/sub 2/O/sub 3/ interfacial layer

1994; Institute of Electrical and Electronics Engineers; Volume: 6; Issue: 10 Linguagem: Inglês

10.1109/68.329642

1941-0174

R. Klockenbrink, H.‐H. Wehmann, A. Schlachetzki,

Silicon Nanostructures and Photoluminescence

The thermal stability of In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors has been improved by using thin electron-beam evaporated Al 2 O 3 interfacial layers of different thickness. The addition of the interfacial layer allows for an increase in anneal temperature from 250/spl deg/ to 350/spl deg/C with a four-fold dark current increase. Measurements of impulse responses at 1.3 μm showed, that the frequency behaviour is not adversely affected by the increased capacitance caused by oxide charges, since metal-semiconductor-metal photodetectors are carrier transit-time limited.