Formation of the accumulation layer in polymer field-effect transistors
2003; American Institute of Physics; Volume: 82; Issue: 9 Linguagem: Inglês
10.1063/1.1556564
ISSN1520-8842
AutoresLukas Bürgi, Richard H. Friend, Henning Sirringhaus,
Tópico(s)Semiconductor materials and devices
ResumoWe present an experimental study of charge transfer in polymer thin-film field-effect devices. The rearrangement of the charge-carrier density in the transistor channel upon a gate-voltage swing has been monitored in real time and space by means of noncontact scanning potentiometry. The experimental results are in excellent agreement with a simple theory, in which the charging currents are assumed to be driven by drift in the self-induced electric field. The charge density exponentially approaches its final value with a time constant given by L2/μ|Vg|π2, where L is the characteristic device dimension, μ the field-effect mobility, and Vg the final gate voltage.
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