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Measurement of the room temperature band gaps of red HgI2 by a photoconductive technique

1988; Elsevier BV; Volume: 65; Issue: 2 Linguagem: Inglês

10.1016/0038-1098(88)90680-1

1879-2766

E. López‐Cruz, Obdulio Ramos,

Semiconductor Quantum Structures and Devices

The direct and indirect band gaps of red HgI2 are measured at room temperature by means of the Moss-Hawkins photoconductive technique. The analysis of the results by the theory of indirect transitions yields Egi = 2.030 eV and Eph = 0.013eV for the indirect band gap and the phonon energy respectively. The value of the direct band gap obtained is Egd = 2.108 eV.