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The growth of CdHgTe by metalorganic chemical vapour deposition for optical communication devices

1988; Elsevier BV; Volume: 86; Issue: 1-4 Linguagem: Inglês

10.1016/0022-0248(90)90825-6

1873-5002

J. Will Thompson, P. Mackett, Graham Jenkin, T. Nguyen Duy, Pietro Gori,

Chalcogenide Semiconductor Thin Films

Abstract MOCVD has been used for the first time to grow CdHgTe by the interdiffused multilayer process for 1.3–1.55 μm photodiodes. The growth has been optimised to give uniform material with a smooth surface morphology. The use of a HgTe layer as the p-type Ohmic contact has resulted in photodiodes having a very low series resistance (30–35 Ω). The epitaxial diodes have also exhibited good thermal stability. Other parameters are comparable with those obtained for bulk grown devices.