Nitrogen-induced decrease of the electron effective mass in GaAs1−xNx thin films measured by thermomagnetic transport phenomena
2003; American Institute of Physics; Volume: 82; Issue: 8 Linguagem: Inglês
10.1063/1.1554777
ISSN1520-8842
AutoresDavid L. Young, John F. Geisz, T. J. Coutts,
Tópico(s)Semiconductor materials and devices
ResumoThin films of GaAs1−xNx were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, and Nernst coefficient measurements. Density of states, effective-mass values, which are calculated from the transport data, decrease from 0.084me to 0.029me as x increases from 0 to 0.004.
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