New TiO x -MIS and Si0 2 -MIS silicon solar cells
1978; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 5 Linguagem: Inglês
10.1109/t-ed.1978.19119
ISSN1557-9646
AutoresP. Van Halen, R. Mertens, R.J. Van Overstraeten, R.E. Thomas, J. van Meerbergen,
Tópico(s)Nanowire Synthesis and Applications
ResumoTwo new types of solar cells are described in which either a TiO x or a SiO 2 layer is deposited onto p silicon; contacts are obtained by means of a MIS tunnel diode grid. It is shown that the TiO x -MIS cells can be realized by single-mask completely low-temperature processing by employing spin-on of titanium-oxide antireflective coating. Conversion efficiencies of 8 percent at AM1 have been achieved with these cells; they perform even more efficiently at higher illumination levels. With the SiO 2 -MIS cells efficiencies of 12 percent have been reached, at the expense of a slightly more complicated process. A detailed comparison between the two cells is given.
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