Artigo Revisado por pares

New TiO x -MIS and Si0 2 -MIS silicon solar cells

1978; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 5 Linguagem: Inglês

10.1109/t-ed.1978.19119

ISSN

1557-9646

Autores

P. Van Halen, R. Mertens, R.J. Van Overstraeten, R.E. Thomas, J. van Meerbergen,

Tópico(s)

Nanowire Synthesis and Applications

Resumo

Two new types of solar cells are described in which either a TiO x or a SiO 2 layer is deposited onto p silicon; contacts are obtained by means of a MIS tunnel diode grid. It is shown that the TiO x -MIS cells can be realized by single-mask completely low-temperature processing by employing spin-on of titanium-oxide antireflective coating. Conversion efficiencies of 8 percent at AM1 have been achieved with these cells; they perform even more efficiently at higher illumination levels. With the SiO 2 -MIS cells efficiencies of 12 percent have been reached, at the expense of a slightly more complicated process. A detailed comparison between the two cells is given.

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