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Negative Magnetoresistance of Indium Tin Oxide Nanoparticle Thin Films Grown by Chemical Thermolysis

2013; Physical Society of Japan; Volume: 82; Issue: 2 Linguagem: Inglês

10.7566/jpsj.82.024710

1347-4073

Akira Fujimoto, Kota Yoshida, Tomohiro Higaki, Yuta Kimura, Masami Nakamoto, Yukiyasu Kashiwagi, Mari Yamamoto, Masashi Saitoh, Toshinobu Ohno, S. Furuta,

Quantum and electron transport phenomena

To clarify the electrical transport properties of nanostructured thin films, tin-doped indium oxide (ITO) nanoparticle (NP) solution-processed films were fabricated. An air-atmosphere, simple chemical thermolysis method was used to grow the ITO NPs, and the structural and electrical properties of spin-coated granular ITO NP films were investigated. X-ray diffraction measurements showed clear observation of the cubic indium oxide (222) diffraction peak, and films with a smaller Sn concentration were shown to have a better crystalline quality. We further explored the physical origin of the sign of the magnetoresistance (MR) in the variable-range hopping (VRH) region. A negative MR under a magnetic field perpendicular to the film surface increases with decreasing Sn concentration, and these results can be explained by the forward interference model in the VRH region. A larger negative MR is attributed to longer localization and hopping lengths, and better crystallinity. Thus, ITO NP thin films produced by this method are attractive candidates for oxide-based diluted magnetic semiconductors and other electronic devices.