Degradation Analysis of InGaN Laser Diodes
2002; Wiley; Volume: 194; Issue: 2 Linguagem: Inglês
10.1002/1521-396x(200212)194
ISSN1521-396X
AutoresV. K�mmler, G. Br�derl, S. Bäder, S. Miller, A. Weimar, A. Lell, V. H�rle, Ulrich T. Schwarz, N. Gmeinwieser, W. Wegscheider,
Tópico(s)Metal and Thin Film Mechanics
ResumoThe current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 °C). DC and pulsed aging shows current as main degradation reason compared to heat for InGaN-LDs. Photoluminescence spectra of the quantum wells are being compared before and after degradation caused by current.
Referência(s)