Artigo Revisado por pares

Direct growth of nanographene films by surface wave plasma chemical vapor deposition and their application in photovoltaic devices

2012; Royal Society of Chemistry; Volume: 2; Issue: 8 Linguagem: Inglês

10.1039/c2ra01024k

ISSN

2046-2069

Autores

Golap Kalita, Madhu Sudan Kayastha, Hideo Uchida, Koichi Wakita, Masayoshi Umeno,

Tópico(s)

Carbon Nanotubes in Composites

Resumo

Here, we report direct synthesis of nanographene films on silicon (n-Si) and glass (SiO2) substrates by microwave assisted surface wave plasma (MW-SWP) chemical vapor deposition (CVD) and their application in photovoltaic devices. The technique is a metal catalyst free, rapid growth process and the film can be deposited on different substrates; thus simplifying the synthesis process for various device applications. The directly grown graphene film consists of triangular shaped nanographene domains with sizes of 80–100 nm in length. The nanographene domains interconnect to form a continuous film which shows metallic characteristics. A Schottky junction based photovoltaic device is fabricated with directly grown nanographene film on n-Si and a conversion efficiency of 2.1% is achieved. This finding shows that a transparent nanographene film can be deposited on different substrates and can be integrated for various devices.

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