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Detailed band structure for 3 C -, 2 H -, 4 H -, 6 H -SiC, and Si around the fundamental band gap

1996; American Physical Society; Volume: 54; Issue: 15 Linguagem: Inglês

10.1103/physrevb.54.10257

1095-3795

Clas Persson, U. Lindefelt,

Boron and Carbon Nanomaterials Research

Electron and hole effective masses for the polytypes 3C-, 2H-, 4H-, and 6H-SiC have been calculated within the framework of the local density approximation including spin-orbit interaction. To establish the accuracy of the approximations, effective masses for both electrons and holes in Si have also been calculated. It is found that the agreement with well-established experimental values is excellent both for Si and SiC. The valence bands have been parametrized in terms of k\ensuremath{\cdot}p parameters. \textcopyright{} 1996 The American Physical Society.