Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

Artigo Acesso aberto

Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

1989; EDP Sciences; Volume: 24; Issue: 3 Linguagem: Francês

10.1051/rphysap

ISSN

2777-3671

Autores

C Lejeune, J.P. Grandchamp, Jean-Paul Gilles, Emmanuel Collard, P. Scheiblin,

Tópico(s)

Diamond and Carbon-based Materials Research

Resumo

from teaching and research institutions in France or abroad, or from public or private research centers.L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

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Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification