Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer
2009; American Chemical Society; Volume: 10; Issue: 1 Linguagem: Inglês
10.1021/cg901189k
ISSN1528-7505
AutoresWei-Cheng Lien, Nicola Ferralis, Carlo Carraro, Roya Maboudian,
Tópico(s)Copper Interconnects and Reliability
ResumoThe epitaxial growth of 3C-SiC films on Si(100) substrates is demonstrated using a two-step chemical vapor deposition (CVD) process. A thin (50 nm) SiC buffer layer grown at 925 °C using 1,3-disilabutane is shown to enable the growth of a high crystalline quality epitaxial 3C-SiC film using methyltrichlorosilane at 1200 °C. The ability to deposit high-quality epitaxial film is traced to the suppression of void defects and to the improvement in film adhesion obtained by the deposition of the buffer layer at low temperature.
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