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Electronic behaviour of decorated stacking faults in silicon

1989; Elsevier BV; Volume: 4; Issue: 1-4 Linguagem: Inglês

10.1016/0921-5107(89)90227-4

1873-4944

А. R. Peaker, B. Hamilton, G.R. Lahiji, İ.E. Türe, G. W. Lorimer,

Advancements in Semiconductor Devices and Circuit Design

Oxygen-induced stacking faults have been generated at a concentration of about 107 cm−2 in n-type silicon. The photoluminescence, electron capture and electron emission from clean stacking faults and from faults decorated with gold and platinum have been investigated. In contrast to previously published work on extended defects in plastically deformed silicon we observe a simple photoluminescence spectrum dominated by the D1 line with a weak D2 emission; other D lines are absent. Using deep level transient spectroscopy we observed electron traps with an activation energy of 415 meV which vary linearly in concentration with the stacking fault density. This activation energy increases when either gold or platinum is diffused into the sample, tending to move the state towards midgap where it acts as a powerful generation centre. The capture properties of the stacking-fault-related deep state are also modified by decoration. The behaviour is almost point defect like for “clean” stacking faults but capture tends towards the previously reported logarithmic behaviour in the decorated case.