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Optical properties of quasicrystalline approximant boron-rich solids

1993; Elsevier BV; Volume: 153-154; Linguagem: Inglês

10.1016/0022-3093(93)90363-3

1873-4812

Ai Hori, Kaoru Kimura, Tomofumi Tada, H. Yamashita,

Boron and Carbon Nanomaterials Research

Abstract The photoluminescence (PL) spectrum of a single crystal of β-rhombohedral boron, which is a rhombohedral crystalline approximant of the icosahedral quasicrystal, has a peak around 1.14 eV. This is assumed to correspond to recombination between a hole in the intrinsic acceptor level originated from B12 icosahedral cluster, and an electron in the highest trapping level. Thermal quenching of the PL intensity is analyzed by two activation processes, whose activation energies are 0.12 and 0.004 eV. The former is considered to be an escape process of an electron from the trapping level.