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Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

2002; Institute of Physics; Volume: 149; Issue: 11 Linguagem: Inglês

10.1149/1.1512675

1945-7111

B. Luo, R. Mehandru, J. Kim, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa,

Ga2O3 and related materials

Three different passivation layers MgO, and were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited produced ∼70-75% recovery of the drain-source current, independent of whether or plasma chemistries were employed. Both the and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The had superior long-term stability, with no change in HEMT behavior over 5 months aging. © 2002 The Electrochemical Society. All rights reserved.