Femtosecond investigation of charge carrier dynamics in CdSe nanocluster films
1997; American Institute of Physics; Volume: 106; Issue: 8 Linguagem: Inglês
10.1063/1.473087
ISSN1520-9032
AutoresXi‐Cheng Ai, Rong Jin, Changbao Ge, Jing Jing Wang, Yinghua Zou, Xiaowen Zhou, Xurui Xiao,
Tópico(s)Copper-based nanomaterials and applications
ResumoThe charge carrier dynamics in the novel CdSe nanocluster films fabricated by a chemical deposition method was studied by the femtosecond pump–probe measurements. The intensity dependent signals can be well described by a rate equation model. The overall kinetic process is listed as follows: a rapid electron trapping (<1 ps), the Auger recombination, the recombination of electrons in the surface states (∼46 ps) and the long-lived trapped electron–hole recombination. When the cluster radius is as large as 27 nm, an induced transient absorption can be observed. We attribute the induced transient absorption to the formation of the biexcitons or the trapped-carrier-induced Stark effect.
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