Portal de Periódicos da CAPES

Anomalous leakage current in LPCVD PolySilicon MOSFET's

1985; Institute of Electrical and Electronics Engineers; Volume: 32; Issue: 9 Linguagem: Inglês

10.1109/t-ed.1985.22212

1557-9646

J.G. Fossum, A. Ortíz-Conde, H. Shichijo, S. Banerjee,

Thin-Film Transistor Technologies

The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The model predictions are consistent with measured current-voltage characteristics. Physical insight afforded by the model implies device design modifications to control and reduce I L , and indicates when the back-surface leakage component is significant.