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Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique

2012; Elsevier BV; Volume: 86; Issue: 12 Linguagem: Inglês

10.1016/j.vacuum.2012.04.019

1879-2715

Yu Lv, Jin Ma, Wei Mi, Caìna Luan, Zhen Zhu, Hongdi Xiao,

Advanced Photocatalysis Techniques

Ga2O3 thin films have been deposited on sapphire (0001) substrates at different substrate temperatures by metal-organic chemical vapor deposition. Trimethylgallium and oxygen were used as precursors for gallium and oxygen, respectively. Structural and optical properties of the films have been investigated. X-ray diffraction and high resolution transmission electron microscopy measurements identified an epitaxial relationship of β-Ga2O3 (2¯01)||Al2O3 (0001) with β-Ga2O3 ||Al2O3 and β-Ga2O3 ||Al2O3 . The average transmittance of the obtained films in the visible wavelength range was over 92.3% and the band gap was about 4.73–4.96 eV.