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Nanoscale investigations of shift of individual interfaces in temperature induced processes of Ni–Si system by secondary neutral mass spectrometry

2010; American Institute of Physics; Volume: 97; Issue: 23 Linguagem: Inglês

10.1063/1.3524491

1520-8842

Ákos Lakatos, G.A. Langer, A. Csík, Csaba Cserháti, M. Kis‐Varga, Lajos Daróczi, G.L. Katona, Zoltán Erdélyi, G. Erdélyi, K. Vad, Dezső L. Beke,

Thin-Film Transistor Technologies

We describe a method for measurement of nanoscale shift of interfaces in layered systems by a combination of secondary neutral mass spectrometry and profilometer. We demonstrate it by the example of the investigation of interface shifts during the solid state reaction in Ni/amorphous-Si system. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the amorphous Si layer as well as the average growth kinetics of the product phases were determined at 503 K. The results show that nanoscale resolution can be reached and the method is promising for following solid state reactions in different thin film systems.